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Vol. 143, No. 8, August 2012, pp. 136-142

 

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Tin Modified Tungsten Oxide Thin Film for Ammonia Gas Sensing at Room Temperature
 
K. J. PATEL, M. S. DESAI, * C. J. PANCHAL

Applied Physics Department, Faculty of Technology & Engineering,

M. S. University of Baroda, Vadodara-390001, Gujarat, India

Tel.: +91-9825094761, fax: +91-2652423898

* E-mail: cjpanchal_msu@yahoo.com

 

Received:   4 April 2012   /Accepted: 21 August 2012   /Published: 28 August 2012

Digital Sensors and Sensor Sysstems

 

Abstract: Tin (Sn) modified Tungsten oxide (WO3) thin film gas sensor was prepared on glass substrate having Aluminum (Al) interdigitated electrode by thermal evaporation for detecting Ammonia (NH3) gas. The Sn concentration is changed by changing the thickness of the Sn film on WO3 and subsequently annealing it in air. The response of the sensor depends on Sn concentration and annealing temperature. At room temperature an optimum response of 19 towards NH3 and a response time of the order of 1 s was obtained for the sensor having 125 Sn film thickness on 2000 WO3 thin film annealed at 300 ˚C temperature in air.

 

Keywords: Sn modified WO3 thin film, SEM, Gas sensor, Ammonia (NH3), Thermal evaporation

 

 

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