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Vol. 147, No. 12, December 2012, pp. 143-150

 

Bullet

 

MOS Device Chemical Response to Acceptor Stimuli
 
1 Rina LOMBARDI, 1,2 Ricardo ARAGÓN and 3 Héctor A. MEDINA

1Laboratorio de Películas Delgadas, Facultad de Ingeniería, Universidad de Buenos Aires,
Paseo Colón 850, C. P. 1063, Buenos Aires, Argentina

2 CINSO – CONICET – CITIDEF – UNSAM
San Juan Bautista de La Salle 4397 (B1603ALO) Villa Martelli, Argentina

3 HAMdesign, PALPA 3784 - (C1427EBF) – Buenos Aires, Argentina

Tel.: 54 11 4343 0891, fax: 54 11 4331 9877

E-mail: rlombar@fi.uba.ar

 

 

Received:   2012   /Accepted: 18 December 2012   /Published: 31 December 2012

Digital Sensors and Sensor Sysstems

 

Abstract: Gap gate MOS capacitors exhibit changes in their state of charge, monitored by positive voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to SO2 or NO2 concentration in air. Chemically induced charges are negative and their surface densities are twice as high for SO2 as those obtained for NO2, consistently with doubly charged anions; dynamic range is correspondingly halved. Both responses are mediated by associative chemisorption with oxygen.

 

Keywords: Chemical sensors; Gas detectors, MOS devices, NO2, SO2

 

 

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