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Vol. 149, No. 2, February 2013, pp. 49-53




Performance of Hexagon Au Electrode on ZnO Thin Film Schottky Diode Gas Sensor

a Mas Elyza MOHD AZOL, c Mahnaz SHAFIEI, a Pei Ling LEOW, b Kai Long FOO, b Uda HASHIM and a Rashidah ARSAT

a Faculty of Electrical Eng, Universiti Teknologi Malaysia (UTM), Malaysia

b Institute of Nanoelectronic Engineering (INEE), Universiti Malaysia Perlis, Malaysia

c Science and Engineering Faculty, Chemistry, Physics, Mechanical Engineering, Nanotechnology and Molecular Science Queensland University of Technology (QUT), Brisbane, Australia

E-mail: rashidah@fke.utm.my


Received: 10 October 2013   /Accepted: 14 February 2013   /Published: 28 February 2013

Digital Sensors and Sensor Sysstems


Abstract: This paper presents an analysis of Schottky diode performance with the utilization of zinc oxide (ZnO) thin film as a gas sensor. The presented device is implemented with new type of electrode shape which is hexagon compared to conventional circular Schottky contact. The Schottky diode was integrated with thin film layer of ZnO by using sol-gel method. I-V characteristic of the device response to gas target was obtained and discussed in this paper. Results show larger voltage shift obtained at the reverse biased mode up to 1200  mV at room temperature. The results suggested future research can be done in enhancing the metal oxide thin film based device.


Keywords: Schottky diode, Hexagon Schottky contact, ZnO, Thin film


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