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Vol. 149, No. 2, February 2013, pp. 69-75




Synthesis and Characterization of Pure and Al Modified BaSnO3 Thick Film Resistor and Studies
of its Gas Sensing Performance

1 N. U. PATIL, 2 V. B. GAIKWAD, 3 P. D. HIRE, 3 R. M. CHAUDHARI, 3 M. K. DEORE, 3* G. H. JAIN

1 Material Science Lab., K. P. G. Arts, Commerce and Sc. College, Igatpuri - 422 303, India

Tel.: 91 9890131102

2 BCUD University of Pune, Pune - 411 007, India

3 Material Science Lab., K. T. H. M. College, Nashik - 422 002, India

E-mail: narendraupatil@gmail.com, * gotanjain@rediffmail.com


Received: 26 November 2012   /Accepted: 14 February 2013   /Published: 28 February 2013

Digital Sensors and Sensor Sysstems


Abstract: In this work we report the synthesis, microstructure, electric properties and sensing performance of BaSnO3 (BS) powder, it was prepared by solid state mechano-chemical method. As prepared powder is calcinated at temperatures 1000 C and 1200 C and tested for crystallization. Thick films were prepared using simple yet effective screen-printing technology. Structural and electrical analyses were performed and the results have been correlated. The pure BS film shows good response (S=9.8) to NH3 at elevated temperature up to 500 C along with response other gases with lower sensitivity such as CO2, CO, H2S for various gas concentrations, when the pure film is surface modified with Al2O3, film improves the selectivity and sensitivity. Maximum response (S=21.2) was found to H2S gas at temperature of 300 C for gas concentration as low as up to 100 ppm. The characterization of the films was done by XRD, SEM and TGA. Crystallite size, surface area, electric properties and gas sensitivity of the films were measured and presented.


Keywords: BaSnO3 (BS), Thick films resistor, H2S gas sensor, Sensitivity, Selectivity


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