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Vol. 39, Issue 1, January 2004, pp. 100-105

 

Bullet

 

Gas-sensing Properties of a Field-Effect Transistor with a Bis[phthalocyaninato]

Samarium Complex/SiO2/Si Structure

 

 

Dan Xie1, Yadong Jiang2, Tianling Ren1, Litian Liu1

 

1Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

2School of Optoelectronic Information,

University of Electronic Science and Technology of China,

Chengdu, 610054 P.R.China

Phone: ++86-10-62789147-304,

E-mail: xiedan@mail.tsinghua.edu.cn

 

 

Received:  15 December 2003        /Accepted: 14 January 2004         /Published: 18 January 2004

 

Abstract: Based on the conventional metal-oxide-semiconductor-field-effect transistor (MOSFET), a new chemical field-effect transistor (ChemFET) gas-sensing device was fabricated by depositing organic gas-sensing material on the gate area of MOSFET replacing the gate metal. Sandwich-like bis[2,3,9,10,16,17,23,24-octakis(octyloxy)phthalocyaninato] samarium complex Sm[Pc*]2 (Pc*=Pc(OC8H17)) was used as the gas-sensing material for detecting nitrogen dioxide (NO2). Using Langmuir-Blodgett (LB) technology, Sm[Pc*]2 LB film was prepared and deposited on the gate area forming the gas-sensing film/oxide/semiconductor structure with a sensitive gate area of 50mm50mm. The gas-sensing property and response-recovery property of Sm[Pc*]2 LB film/SiO2/Si structural ChemFET sensor to NO2 gas was studied by the change of drain current (IDS) during gas exposure. The results show that ChemFET gas sensor with Sm[Pc*]2 LB film can detect NO2 gas down to 2.5ppm. And the response and recovery time to 40ppm NO2 gas was about 15 s and 3 min. The mechanism of sensitivity of Sm[Pc*]2 LB film ChemFET to NO2 was also discussed in this paper.

 

Keywords: Gas sensor, ChemFET, LB films, NO2 gas, Bis[phthalocyaninato] samarium

 

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