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Vol. 157, Issue 10, October 2013, pp. 387-391

 

Bullet

 

The Monte Carlo Method Applied to Study of One-Dimensional Electronic Device (Diode) Based on Hg0.8Cd0.2Te
 
1 H. MOUGHLI, 2 A. BELGHACHI, 1 M. DAOUDI, 1 A. HASNI, 2 L. VARANI

1 Laboratory physics and semiconductor devices, Bechar University Po. Box No. 417, 08000 Bechar, Algeria

2 Institut d'Electronique du Sud, UMR CNRS 5214, University Montpellier II, c.c.084, place Bataillon, 34095 Montpellier Cedex 5, France
E-mail: moughlihassane@yahoo.fr

 

Received: 8 August 2013   /Accepted: 25 September 2013   /Published: 31 October 2013

Digital Sensors and Sensor Sysstems

 

Abstract: We propose in the present work a numerical solution of the Boltzmann Transport Equation using Monte Carlo method. Within a device, both the transport kernel and the field solver are coupled to each other. The field associated with the potential coming from Poisson's equation is the driving force accelerating particles in the Monte Carlo phase, below we give an extensive description of the Monte Carlo particle-based device simulators with emphasis is on the Poisson equation coupling. Numerical results are presented for one-dimensional Hg0.8Cd0.2Te n+nn+ structure, the presence of velocity overshoot has been observed and it is recognized that the fluctuation of velocity and energy term plays an important role in the simulation of semiconductor devices.

 

Keywords: Transport of carrier, Monte Carlo method, Poisson equation, Semiconductor n+ nn+ structure.

 

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