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Vol. 162, Issue 1, January 2014, pp. 1-4

 

Bullet

 

Semiconductor Sensors for a Wide Temperature Range
 

1 Nikolay GORBACHUK, 2 Mikhail LARIONOV, 2 Aleksey FIRSOV, 2 Nikolay SHATIL

1 Scientifically Technical Enterprise "TDM”, Kiev Reg., Ukraine

2 D.V. Efremov Scientific Research Institute of Electrophysical Apparatus (NIIEFA), St. Petersburg, Russia

1 E-mail: n.gorbachuk@gmail.com

 

Received: 25 September 2013 /Accepted: 22 November 2013 /Published: 31 January 2013

Digital Sensors and Sensor Sysstems

 

Abstract: Prototype sensors are described that are applicable for pressure, position, temperature, and field measurements in the temperature range of 4.2 to 300 K. The strain gauges utilize the silicon substrate and thin film technology. The tensosensitivity of strain sensors is 40 µV/mln-1 or better depending on metrological characteristics of semiconductor films, orientation, and current. The temperature sensors (thermistors) make use of the germanium powder bulk. The temperature coefficient of resistance is within 50-100 % /K at 4.2 K. The magnetic field sensors use GaAs films that offer weak temperature dependence of parameters at high sensitivity (up to 300-400 mV/T).

 

Keywords: Semiconductor, Cryogenic, Hall sensors, Thermistors, Strain gauges

 

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