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2000-2002 S&T e-Digest Contents

2003 S&T e-Digest Contents


Vol. 40, Issue 2, January 2004, pp. 145-151




Electrophysical Properties of Gas Sensitive Films SnO2 Doped

with Palladium


Stanislav REMBEZA, Ekaterina REMBEZA, Tamara SVISTOVA

Voronezh State Technical University, Moscow av., 14, 394026 Voronezh, Russia,

Phone +7-0732-132649, fax +7-0732-463277

E-mail: rembeza@ftt.vsu.ru


Received: 15 January 2004   /Accepted: 14 February 2004   /Published: 20 February 2004


Abstract: Pd-dopant influence (from 0,5 to 3 weight %) on the electrophysical properties and gas sensitivity of SnO2 films, produced by reactive ion-beam sputtering of tin target, was investigated. Doping with palladium was carried out from water salt solution PdCl2. It was found that Pd-dopant (1,5 weight % Pd) has decreased the temperature of maximal gas sensitivity of SnO2 films towards ethanol and acetone up to 200 oC and 250 oC, respectively. Possible mechanisms of Pd influence on the gas sensitivity of SnO2 films were discussed.


Keywords: SnO2 films, palladium doping, gas sensitivity


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