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Vol. 85, Issue 11, November 2007, pp.1699-1707

 

Bullet

 

Electrical Characterization of a Nanoporous Silicon Sensor for Low ppm Gas Moisture Sensing

 

Tarikul ISLAM, *Hiranmay SAHA

Electrical Engineering Department, F/O Engg. & Technology,

J.M.I. University (a Central University) Jamia Nagar, New Delhi 110025, India

E-mail: tariq940@rediffmail.com

*IC Design and Fabrication Centre, Deptt. of E.T.C.E., Jadavpur University

Kolkata 700032, India

 

 

Received: 25 April 2007   /Accepted: 20 November 2007   /Published: 26 November 2007

 

Abstract: A nanoporous silicon sensor prepared by electrochemical etching of p type single crystal silicon in HF electrolyte has been characterized for measuring gas moisture in the range of 6 to 100 ppmV. Impedance characteristics show that PS may also be useful for developing CMOS compatible trace moisture sensor. The behavior of the capacitive sensor has also been inverse modeled using multilayer perceptron neural network to determine the concentration of the soft sensor. The simulation results closely follow the actual sensor response.

 

Keywords: Porous silicon, ppmV moisture sensing, Electrical characterization, Inverse modeling, Multilayer perceptron neural network

 

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