Sensors & Transducers Journal (ISSN: 2306-8515, e-ISSN 1726-5479) |
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Vol. 171, Issue 5, May 2014, pp. 86-92
Silicon-on-Insulator Lateral-Insulated-Gate-Bipolar-Transistor with Built-in Self-anti-ESD Diode 1 Xiaojun Cheng, 1* Haipeng Zhang, 2 Ruisheng Qi, 3 Buchun Su, 3 Weili Zhao, 4 Dejun Wang
1 School of Electronics & Information, Hangzhou Dianzi University, Hangzhou, 310018, China * E-mail: islotus@163.com
Received: 11 March 2014 /Accepted: 30 April 2014 /Published: 31 May 2014 |
Abstract:
Keywords: Power SOI LIGBT, Built-in self-anti-ESD, Design and modification, Breakdown, Transient time.
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