Vol. 91, Issue 4, April 2008, pp.47-54

Influence of Pd Layer on the Sensitivity of CH_x/PS/Si as Structure for Oxygen Sensing

N. Ghellai, S. Belhousse, N. Ababou , Y. Ouadah , N. Gabouze

 UDTS, 2, Bd Frantz Fanon BP 140, 7-Merveilles, Algiers 16200, Algeria

E-mail: ngabouze@yahoo.fr

Received: 20 February 2008   /Accepted: 21 April 2008   /Published: 30 April 2008

Abstract: It has been demonstrated recently that the fabricated gas sensing device based on hydrocarbons (CHx)/Porous silicon structure can be used for detecting a low concentration of a large variety of gases but does not respond to oxygen. In this work, an oxygen sensor based on Palladium/hydrocarbons (CHx)/ Porous silicon/ Silicon structure has been studied in presence of oxygen gas. Current-voltage and capacitance-voltage characterizations show that Pd/CHx-PS/Si structure is very sensitive toward O2 gas. A fast response time of the sensor of about 3 s is measured.

Keywords: Porous silicon, Gas sensor, Oxygen, Palladium, Catalyst

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