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Vol. 193, Issue 10, October 2015, pp. 33-40

 

Bullet

 

Wide Spectral Sensitivity of Monolithic a-SiC:H piín/pin Photodiode
Outside the Visible Spectrum
 

1, 2, 3 Manuela Vieira, 1, 2 Manuel Augusto Vieira, 1 Isabel Rodrigues, 1, 2 Vitor Silva, 1, 2 Paula Louro, 1, 2 A. Fantoni

1 Telecommunication and Computer Dept. ISEL, R. Conselheiro EmŪdio Navarro, 1959-007 Lisboa, Portugal
2 CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal
3 DEE-FCT-UNL, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal
1 Tel.: +351218317150, fax: +351218317144

1 E-mail: mv@isel.ipl.pt

 

Received: 31 August 2015 /Accepted: 5 October 2015 /Published: 30 October 2015

Digital Sensors and Sensor Sysstems

 

Abstract: In this paper, we experimentally demonstrate the use of near-ultraviolet steady state illumination to increase the spectral sensitivity of a double a-SiC/Si piín/pin photodiode beyond the visible spectrum (400 nm-880 nm). The concept is extended to implement a 1 by 4 wavelength division multiplexer with channel separation in the visible/near infrared ranges. The device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure, sandwiched between two transparent contacts. Optoelectronic characterization of the device is presented and shows the feasibility of tailoring the wavelength and bandwidth of a polychromatic mixture of different wavelengths. Results show that the spectral current under steady state ultraviolet irradiation depends strongly on the wavelength of the impinging light, and on the background intensity and irradiation side allowing controlled high-pass filtering properties. If several monochromatic pulsed lights, in the visible/near infrared (VIS/NIR) range, separately or in a polychromatic mixture illuminate the device, data shows that, front background enhances the light-to-dark sensitivity of the medium, long and infrared wavelength channels, and quench strongly the low wavelengths channels. Back background has the opposite behavior; it enhances only channel magnitude in short wavelength range and strongly reduces it in the long ones. This nonlinearity provides the possibility for selective tuning of a specific wavelength. A capacitive optoelectronic model supports the experimental results. A numerical simulation is presented.

 

Keywords: Amorphous SiC technology, Optoelectronics, Spectral sensitivity, UV irradiation, Photodiode, Multiplexer device, VIS/NIR decoding, Numerical simulation.

 

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