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Vol. 193, Issue 10, October 2015, pp. 106-113

 

Bullet

 

PbS Infrared Detectors: Experiment and Simulation
 

1 S. KOUISSA, 1A. DJEMEL, 1 M. S. AIDA, 2 M. A. DJOUADI

1 Department of Physics, University of Constantine1, 25000, Algeria
2 Laboratoire ID2M, Institut des Matériaux Jouhn-Rouxel-CNRS, Université de Nantes, France
1 Tel.: (213) 31 81 11 07, fax: (213) 31 81 11 08

E-mail: skouissa@yahoo.fr, djemelamor@yahoo.fr, aida_2salah@yahoo.fr, Abdou.djouadi@cnrs-imn.fr

 

Received: 31 August 2015 /Accepted: 5 October 2015 /Published: 30 October 2015

Digital Sensors and Sensor Sysstems

 

Abstract: The present work deals with the characterization and simulation of lead sulfide (PbS) photoconductors infrared detectors growth by Chemical Bath Deposition (CBD) method. Three different solutions bath are used in order to explore the doping effect and oxidant agent on detection capabilities. Photoelectrical characterization indicates that detectors performances depend strongly on oxidant and doping agents. A simulation study with surface state model is also presented. The physical parameters are deduced and are found to be in agreement with those published in the literature.

 

Keywords: Chemical Bath Deposition, Photoconductors, Infrared detectors, Surface state model, PbS.

 

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