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Vol. 213, Issue 6, June 2017, pp. 46-53




Nanostructured Sensors for Detection of Hydrogen Peroxide Vapours

1 Vladimir AROUTIOUNIAN, 1 Valeri ARAKELYAN, 1 Mikayel ALEKSANYAN, 1 Artak SAYUNTS, 1 Gohar SHAHNAZARYAN, 2 Petr KACER, 2 Pavel PICHA, 2 Jiri KOVARIK,
Jakub PEKAREK and 3 Berndt JOOST

1 Department of Physics of Semiconductors and Microelectronics, Yerevan State University, 1 A. Manoogian St., Yerevan, 0025, Republic of Armenia
2 University of Chemistry and Technology, Technická 5, 166 28 Prague 6, Czech Republic
3 Institute for Pharmaceutical Technology, Fachhochschule Nordwestschweiz, Hochschulefür Life Sciences, Gr?ndenstrasse 40, CH-4132 Muttenz, Switzerland
1 Tel.: 374 60 710315, fax: 374 60 710355

1 E-mail: kisahar@ysu.am


Received: 18 May 2017 /Accepted: 20 June 2017 /Published: 30 June 2017

Digital Sensors and Sensor Sysstems


Abstract: Solid-state sensors made from doped metal oxide ZnO<La> and SnO2<Co> were prepared for detection of hydrogen peroxide vapours. Gas sensitive nanostructured films were manufactured by the high-frequency magnetron sputtering method. Thicknesses of deposited semiconductor nanostructured films were measured and its morphology was investigated. The average size of nanoparticles was equal to 18.7 nm for deposited films. The response of the prepared sensors was measured at different temperatures of the sensor work body and different concentrations of hydrogen peroxide vapours. It was found that both La-doped ZnO and Co-doped SnO2 sensors exhibit a sufficient sensitivity to 10 ppm of hydrogen peroxide vapours at the operating temperature 220 °C and 200 °C, respectively. It was established that the dependencies of the sensor sensitivity on hydrogen peroxide vapours concentration at the work body temperature 150 °C have a linear characteristic for both prepared structures and can be used for determination of hydrogen peroxide vapours concentration.


Keywords: Sensor, Hydrogen peroxide vapours, Semiconductor, Nanostructured film, Doped metal oxide.


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