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Sensors & Transducers Journal (ISSN: 2306-8515, e-ISSN 1726-5479) |
25 Top Downloaded Articles (2007-2012)
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Vol. 214, Issue 7, July 2017, pp. 58-63
T-FinFET Mobility Enhancement from Process-Induced Stress and Compact Model Development Wanjun Wang, * Jin He, Bing Xie, Guangjin Ma, Guoqing Hu, Chunlai Li, Daye Lin, Jingjing Liu, Ying Yu, Zhangyuan Chen and Zhiping Zhou
Peking University Shenzhen SoC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institution, Shenzhen 518057, China E-mail: frankhe@pku.edu.cn
Received: 1 June 2017 /Accepted: 12 July 2017 /Published: 31 July 2017 |
Abstract:
Keywords: nanometerT-FinFET, process technology, strain effect, performane enhancement, modeling
Click <here> or title of paper to download the full pages article in pdf format
This work is licensed under a Creative Commons 4.0 International License
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