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Vol. 28, Special Issue, April-May 2018, pp. 26-31

 

Bullet

 

An Ultra-Low Power CMOS-based Temperature Sensor for Implantable Systems
 

1 Angelito A. Silverio, Lean Angelo A. Silverio and 2Angelina A. Silverio

1 Department of Electronics Engineering, University of Santo Tomas, Manila, Philippines, 1015
1 Department of Mathematics and Physics, College of Science, University of Santo Tomas, Manila, Philippines, 1015
Tel.: (632) 4061611 local 8238

1 E-mail: aasilverio@ust.edu.ph

 

Received: 28 March 2018 /Accepted: 28 May 2018 /Published: 31 May 2018

Digital Sensors and Sensor Sysstems

 

Abstract: This work presents the design of an ultra-low power temperature sensor based on TSMC 0.18 um CMOS technology which can be utilized in implantable systems. The sensor has a sensitivity of 600 mV/oC over the physiological temperature range of 35 to 40 oC, powered by 0.4 V supply rail and dissipates only around 67 nW of power. The design is also robust against low frequency noise, and has achieved likewise a signal-noise-ratio (SNR) of 51 dB. The MOS transistors have all been biased in sub-threshold. The design has comparable performance to MOS-based implantable temperature sensor designs, and has dissipated the least amount of power.

 

Keywords: CMOS Temperature Sensor, Sub-Threshold MOS, Ultra-Low Power Circuit.

 

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