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Vol. 98, Issue 11, November 2008, pp.38-44

 

 

Bullet

 

Pt/GaN Schottky Diode for Propene (C3H6) Gas Sensing
 
1M. SHAFIEI, 1K. KALANTAR-ZADEH, 2M. KOCAN, 2G. PARISH,
2J. ANTOSZEWSKI, 2L. FARAONE, 1W. WLODARSKI

1RMIT University, City Campus, GPO Box 2476V, Melbourne 3001, Victoria, Australia

2School of Electrical, Electronic and Computer Engineering, the University of Western Australia,
35 Stirling Hwy, Crawley, WA 6009, Australia

Tel.: +613-99253690, fax: +613-99252007

E-mail: mahnaz@ieee.org

 

 

Received: 16 October 2008   /Accepted: 17 November 2008   /Published: 30 November 2008

 

 

Abstract: Pt/GaN Schottky diode based gas sensors were fabricated and characterized for their sensitivity towards propene (C3H6) at high operating temperatures. The GaN epitaxial layer was deposited onto sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Current-voltage (I-V) characteristics and the effective change in the barrier height of the sensors were investigated. The effective change of the barrier height was found to be 60.52 meV for 1% propene at 530C. Dynamic response of the sensors at different propene concentrations in synthetic air was measured and a voltage shift of 231 mV and response time of 18s for 1% propene was obtained at temperatures as high as 530C.

 

Keywords: Gas sensors, Propene, Schottky Diodes, GaN

 

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