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Vol. 104, Issue 5, April 2009, pp.58-67

 

 

Bullet

 

Low Frequency Noises of Hydrogen Sensors

 

Zara MKHITARYAN, Ferdinand GASPARYAN, Armine SURMALYAN

Department of Physics of Semiconductors & Microelectronics, Yerevan State University,

1 Alex Manoogian St., 0025 Yerevan, Armenia

Tel.: (37410) 57 83 82

E-mail: fgaspar@ysu.am

 

 

Received: 18 February 2009   /Accepted: 19 May 2009   /Published: 25 May 2009

 

Abstract: The investigated sensors have sandwich structure metal/porous silicon/crystalline silicon/Al. The contact metal on porous silicon was from Au and from Pd. Porosity of the samples is 57 % and 63 %. Current-voltage characteristics and low frequency noises spectra of crystalline silicon sensors with nano-pores surface layer before, during and after influence of hydrogen gas flow are studied. Sensitivity of porous silicon on H2 is determined both by the traditional resistance modulation method and by the noise spectroscopy method.  Analyses of gas sensitivity show advantages of the noise method. Noise spectra of the samples with porous silicon layer in general have 1/fg  forms where 0.7 £ g  £ 1. For low frequency noise modeling and for explanation of its behavior “Correlated number-mobility fluctuation model” is used.

 

Keywords: Low frequency noise, Hydrogen sensor, Porous silicon

 

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