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Vol. 109, Issue 10, October 2009, pp. 117-125




Effect on H2S Gas Sensing Performance of Nb2O5 Addition to TiO2 Thick Films


*1C. G. Dighavkar, 1A. V. Patil, 2S. J. PATIL and *2R. Y. Borse

1Department of Electronic Science, L.V.H.College, Panchavati, Nasik, Maharshtra., India

Tel.: +91-9423925523

2Thick film laboratory, Department of Electronic Science, M.S.G. College,
Malegaon Camp, Dist- Nasik, Maharashtra, India

*E-mail: cgdighavkar@gmail.com and ratanborse@yahoo.co.in



Received: 1 July 2009   /Accepted: 23 October 2009   /Published: 30 October 2009


Abstract: Pure and Nb2O5 doped TiO2 thick films of various concentration ( 1 wt.%, 3 wt.%, 5 wt.%, 7 wt.% and 10 wt.%) were prepared on alumina substrate by using screen printing technique. After preparation, these films were fired at temperature 800 șC for two hours in O2 atmosphere. Morphological, compositional and structural properties of the samples were performed by means of several techniques, including scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDS), X-ray diffraction techniques. In this paper, we report for the first time, H2S gas sensing phenomena observed in Nb2O5 doped-TiO2 screen-printed thick films. The surface resistance of thick films decreases when exposed to H2S gas. Low concentration of doping in Titania (TiO2) with Nb205 has shown significant enhancement in sensitivity (98.78 %) to H2S gas than pure TiO2 film at 200 0C with fast response and recovery time.


Keywords: TiO2, Nb2O5, Thick films, Screen printing, H2S


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