Vol. 117, Issue 6, June 2010, pp.92-98

Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

Arti Arora, Anil Arora, P. J. George, ¹V. K. Dwivedi, ¹Vinay Gupta

Kurukshetra Institute of Technology & Management, Kurukshetra, India

Department of Physics and Astrophysics, South Campus, New Delhi, India

E-mail: aarti25nov@gmail.com

Received: 30 March 2010   /Accepted: 21 June 2010   /Published: 25 June 2010

Abstract: Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction) plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 %) characteristics required for MEMS based acoustic devices.

Keywords: Annealing, rf sputtering, Zinc oxide thin films

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