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Vol. 119, Issue 8, August 2010, pp.117-128

 

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Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor

 

1*M. K. Deore, 2V. B. Gaikwad, 3N. K. Pawar, 2S. D. Shinde,  5D. D. KAJALE, 5G. H. Jain

1*Dept. of Physics, Arts, Commerce and Science College, Ozar (Mig) 422 206, India

2Dept. of Chemistry, K.T.H.M. College, Nashik -422 005, India

3Dept. of Physics, K.A.A.N.M.Sonawane College Satana, India

5Dept. of Physics, Arts, Commerce and Science College, Nandgaon- 423 106, India,

E-mail: 1*deoremadhav@rediffmail.com, 5gotanjain@rediffmail.com

 

 

Received: 8 May 2010   /Accepted: 17 August 2010   /Published: 31 August 2010

 

Abstract: Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 oC, 600 oC and 650 oC for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity) to H2S gas (100 ppm) at 250 oC for firing temperature 650 oC. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDX) and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity), selectivity, response and recovery time of the sensor were measured and presented.

 

Keywords: ZnO gas sensor, Thick films, Sensitivity, Selectivity, Response and recovery time

 

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