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Vol. 122, Issue 11, November 2010, pp.46-54



Synthesis and Physical Properties of Nanocomposites (SnO2)x(In2O3)1-x (x = 0 1) for Gas Sensors and Optoelectronics


Stanislav REMBEZA, *Pavel VORONOV, Ekaterina REMBEZA

Department of Semiconductor Electronics and Nanoelectronics,

Voronezh State Technical University, Moscow av., 14, 394026 Voronezh, Russia

Tel.: +7-4732-437695, fax: +7-4732-463277

*Department of Nanotechnology and Materials for Electron Technics

North-Caucasian State Technical University, Kulakov av., 2, 355029 Stavropol, Russia

Tel./fax: +7-8652-944009

E-mail: rembeza@yandex.ru, vstu-ppe@mail.ru, i-vpe@ya.ru



Received: 16 August 2010   /Accepted: 18 November 2010   /Published: 30 November 2010


Abstract: Experimental results on synthesis of thin film (< 1 μm) nanocomposites (SnO2)x(In2O3)1-x in the whole range of x = (0 1) mass. % are presented. Film nanocomposites were prepared by high-frequency magnetron sputtering of metal oxide targets in the controlled ambient Ar+O2. Films were deposited on the hot substrate (400 0C) and investigated by X-ray phase analysis, atomic-force microscopy, optical and electrical methods. Influence of synthesis regimes and film composition on the grain size of crystals, the band-gap width, the transparency in the visible range of light, concentration and mobility of free charge carriers were determined. It was shown that films with composition (SnO2)x(In2O3)1-x x = 0.9 are perspective for using as gas sensors, films of the same composition but with x = 0.1 can be applied as transparent current conducting electrodes for solar cells.


Keywords: Metal oxide nanocomposites, Thin films, Element composition, Optical and electrical properties, Gas sensitive properties


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