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Vol. 122, Issue 11, November 2010, pp.143-157

 

Bullet

Effect of Ni Doping on Gas Sensing Performance of ZnO Thick Film Resistor

 

1M. K. DEORE, 2V. B. GAIKWAD, 2R. L. PATIL, 3N. K. PAWAR,
2S. D. SHINDE, 3G. H. JAIN

1Dept. of Physics, Arts, Commerce and Science College, Ozar (Mig) 422 206, India

2Materials Research Lab, Department of Physics, K. T. H. M. College, Nashik 422002, India

3Arts, Commerce and Science College, Nandgaon- 423 106, India

E-mail: 1 deoremadhav@rediffmail.com, 2 dr.gaikwadvb@rediffmail.com, 3 gotanjain@rediffmail.com

 

 

Received: 21 July 2010   /Accepted: 18 November 2010   /Published: 30 November 2010

 

Abstract: This work investigates the use of ZnO-NiO as a H2S metal oxide thick film gas sensor. To find the optimum ratio of NiO to ZnO, two compositions were prepared using different molecular percentages and prepared as a thick film paste. These pastes were then screen-printed onto glass substrates with suitable binder. The final composition of each film was determined using SEM analysis. The films were used to detect CO, CL2, ethanol, Amonia and H2S. For each composition tested, the highest responses where displayed for H2S gas. The Thick film having composition of equal molar ZnO and NiO shows the highest response at operating temp. 350 0C for 100 ppm level. The gas response, selectivity, response and recovery time of the sensor were measured and presented. The role played by NiO species is to improve the gas sensing performance is discussed.

 

Keywords: Gas sensor, Thick films, ZnO, NiO, H2S gas sensitivity, Selectivity, Response and recovery time.

 

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