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Vol. 69, Issue 7, July 2006, pp. 629-636

 

Bullet

 

Studies on Chemically Deposited Nonstoichiometric Thin Films of CuInSe2 -a Highly Promising Material for Photosensors

 

R. H. Bari1, L. A. Patil*1, P. P. Patil2

1Materials Research Lab., P.G. Dept. of Physics, Pratap College, Amalner, 425401, India

2Director, Physical sciences , North Maharashtra University, Jalgaon, India

*Corresponding author

E-mail: plalchand_phy_aml@yahoo.co.in

 

 

Received: 3 June 2006   Accepted: 19 July 2006   Published: 25 July 2006

 

Abstract. Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at 60oC. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out. Characterization includes X-ray diffraction (XRD), Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Energy dispersive x-ray analysis (EDAX), Absorption spectroscopy. The results are discussed and interpreted.

 

Keywords: copper indium diselenide, thin films, chemical bath deposition, nonstoichiometry

 

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