On-line Magazine 'Sensors & Transducers' (S&T e-Digest)
(ISSN 1726- 5479)
Vol. 69, Issue 7, July 2006, pp. 629-636
Studies on Chemically Deposited Nonstoichiometric Thin Films of CuInSe2 -a Highly Promising Material for Photosensors
R. H. Bari1, L. A. Patil*1, P. P. Patil2
1Materials Research Lab., P.G. Dept. of Physics, Pratap College, Amalner, 425401, India
2Director, Physical sciences , North Maharashtra University, Jalgaon, India
Received: 3 June 2006 Accepted: 19 July 2006 Published: 25 July 2006
Abstract. Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at 60oC. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out. Characterization includes X-ray diffraction (XRD), Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Energy dispersive x-ray analysis (EDAX), Absorption spectroscopy. The results are discussed and interpreted.
Keywords: copper indium diselenide, thin films, chemical bath deposition, nonstoichiometry
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