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Vol. 129, Issue 6, June 2011, pp.97-104





Use of Polythiophene as a Temperature Sensor



1 Department of Physics, Institute of Science, Civil Lines, Nagpur – 440 001, India

2 Department of Physics, Siddharth College, Mumbai - 400 001, India

*Tel.: +91 9881251338, fax +91 253 2574682

*E-mail: abchourasiansk@rediffmail.com



Received: 3 May 2011   /Accepted: 20 June 2011   /Published: 30 June 2011

Handbook of Laboaratory Measurements book


Abstract: The polythiophene was chemically synthesized using 2,5–dibromothiophene by debromination with magnesium, catalyzed by nickel chloride. The synthesized polymer was undoped using liquid ammonia and then doped again using 5 % aqueous FeCl3 for 2.5 and 5 hour duration. Characterization of undoped as well as doped samples using elemental analysis has been carried out. Elemental analysis shows that concentration of Fe+ ions increases as the duration of doping increases. All samples were pressed into pellets of about 1cm in diameter and were coated, on both sides, by aluminum using vacuum deposition technique. I – V measurements of undoped and FeCl3 doped samples, after coating have been carried out using two probe method. I – V measurements were carried out by applying +ve potential on one side from 0 V to 1 V in steps of 0.1 V and then from 1 V to 10 V in steps of 1 V. The measurements were again carried out after interchanging the polarity of the applied voltage. I – V measurements were also carried out at room temperature as well as at various temperatures in the range from 301 K to 331 K in steps of 5K. These characteristics are just similar to the characteristics of conventional p – n junction diode. The effect of doping is to reduce the knee voltage. I – V characteristics of undoped polythiophene after interchanging the polarity (like reverse bias condition in p–n junction diode) at various temperature are plotted. From the graphs it is observed that the magnitude of current increases as temperature is increased. A straight line graph of temperature versus current for an applied voltage of 3 V indicates that undoped polythiophene can be used as temperature sensor in the temperature range from 301 K to 331 K.


Keywords: Polythiophene, Conducting polymer, p-n junction diode, Temperature sensor.


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