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Vol. 137, Issue 2, February 2012, pp. 74-84

 

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Studies on Gas Sensing Performance of (Sn0.2Ti0.8)O2 Thick Film Resistor

 

1 P. D. HIRE, 1 V. B. GAIKWAD, 2 N. U. PATIL, 1 R. M. CHAUDHARI, 1 R. L. PATIL, *3 G. H. JAIN

1 Material Science Lab., K.T.H.M. College. Nashik - 422 002, India

2 Dept of Physics, Arts, Science and Commerce College, Igatpuri - 422 303, India

3 Dept of Physics, Arts, Science and Commerce College, Nandgaon - 423 106, India

E-mail: * gotanjain@rediffmail.com and 1 pdhdesrane@gmail.com

 

 

Received: 7 November 2011   /Accepted: 14 February 2012   /Published: 28 February 2012

Digital Sensors and Sensor Sysstems

 

Abstract: In this work we report the synthesis, microstructure, electric properties and sensing performance of (Sn0.2Ti0.8) O2 (ST) powder, were prepared by wet chemical method. Thick films were prepared by screen-printing technology. Structural and electrical analyses were performed and the results have been correlated. The pure ST film shows good response (S=12.6) to Cl2 at 350 0C for gas concentration 400 ppm and CuO-modified ST film improves the selectivity and sensitivity and maximum response (S=50.2) was found to H2S gas at 400 0C for same gas concentration. The characterization of the films was done by XRD, SEM and TGA. Crystallite size, surface area, Electric properties and gas sensitivity of the films were measured and presented.

 

Keywords: (Sn0.2Ti0.8) O2 (ST); Thick films; H2S gas sensor; Sensitivity; Selectivity

 

 

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