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Vol. 13, Special Issue, December 2011, pp.98-108

 

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A Novel Silicon-based Wideband RF Nano Switch Matrix Cell and the Fabrication of RF Nano Switch Structures

 

1 Yi Xiu YANG, 2 Hamood Ur RAHMAN and 1 Rodica RAMER

1 School of Electrical Engineering and Telecommunications,

University of New South Wales (UNSW), Sydney, NSW 2052, Australia

Tel.: +61-2-9385-5199

2 Department of Electrical Engineering, College of Electrical and Mechanical Engineering

National University of Science & Technology (NUST), Islamabad, Pakistan

E-mail: 1 yiyang@unsw.edu.au, 2 hamood@ceme.nust.edu.pk

 

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Abstract: This paper presents the concept of RF nano switch matrix cell and the fabrication of RF nano switch. The nano switch matrix cell can be implemented into complex switch matrix for signal routing. RF nano switch is the decision unit for the matrix cell; in this research, it is fabricated on a tri-layer high-resistivity-silicon substrate using surface micromachining approach. Electron beam lithography is introduced to define the pattern and IC compatible deposition process is used to construct the metal layers. Silicon-based nano switch fabricated by IC compatible process can lead to a high potential of system integration to perform a cost effective system-on-a-chip solution. In this paper, simulation results of the designed matrix cell are presented; followed by the details of the nano structure fabrication and fabrication challenges optimizations; finally, measurements of the fabricated nano structure along with analytical discussions are also discussed.

 

Keywords: RF MEMS, Nano switch matrix, Silicon-based, Electron beam lithography, Terahertz technology

 

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