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Vol. 14-1, Special Issue, March 2012, pp.151-159

 

Bullet

 

Silicon Photomultipliers: Dark Current and its Statistical Spread

 

1 Roberto PAGANO, 1 Sebania LIBERTINO, 2 Giusy VALVO, 2 Alfio RUSSO,
2 Delfo Nunzio SANFILIPPO, 2 Giovanni CONDORELLI, 2 Clarice DI MARTINO, 2 Beatrice CARBONE, 2 Giorgio FALLICA and 1 Salvatore LOMBARDO

1 CNR-IMM, VIII Strada Zona Industriale 5, 95121, Catania, Italy

2 IMS-R&D STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy

E-mail: salvatore.lombardo@imm.cnr.it

 

 

Received: 15 November 2011   /Accepted: 20 December 2011   /Published: 12 March 2012

Digital Sensors and Sensor Sysstems

 

Abstract: Aim of this paper is to investigate on a statistical basis at the wafer level the relationship existing among the dark currents of the single pixel compared to the whole Silicon Photomultiplier array. This is the first time to our knowledge that such a comparison is made, crucial to pass this new technology to the semiconductor manufacturing standards. In particular, emission microscopy measurements and current measurements allowed us to conclude that optical trenches strongly improve the device performances.

 

Keywords: Silicon photomultipliers, Dark current, Wafer level

 

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