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Vol. 14-1, Special Issue, March 2012, pp.231-243

 

Bullet

 

The Impact of High Dielectric Permittivity on SOI Double-Gate Mosfet Using Nextnano Simulator

 

Samia SLIMANI, Bouaza DJELLOULI

Laboratoire de Modélisation et Méthodes de calcul LMMC, University of Saida, 20000, Algeria

Tel./fax: 213 (0) 48 47 15 08

E-mail: slimani.samia@gmail.com

 

 

Received: 15 November 2011   /Accepted: 20 December 2011   /Published: 12 March 2012

Digital Sensors and Sensor Sysstems

 

Abstract: Performance of high-k Double-Gate SOI MOSFETs is studied and compared to silicon dioxide based devices. This is achieved by computing variation of threshold voltage, swing subthreshold, leakage current and drain-induced barrier lowering (DIBL) with respect to different gate bias (VG) when gate length (LG) decreases. This comparison is pinpointed taking SiO2 and HfO2 as gate oxides. Furthermore, quantum effects on the performance of DG MOSFETs are discussed. It is observed that less EOT with high permittivity reduces the tunnel current and serves to maintain high drive current, when compared with device using SiO2 dielectric. Our results show that the characteristics of SOI Double Gate MOSFET with HfO2 are superior to that of a device with SiO2 dielectric.

 

Keywords: DG-MOSFET; Quantum effects; Nextnano3d; Modeling

 

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