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Vol. 15, Special Issue, October 2012, pp. 22-34

 

Selected papers from Nanotech Conference & Expo (NanoTech' 2012),
18-21 June 2012, Santa Clara, California, USA

 

Bullet

 

Reversible and Irreversible Temperature-induced Changes in Exchange-biased Planar Hall Effect Bridge (PHEB)
Magnetic Field Sensors

 

G. Rizzi, N. C. Lundtoft, F. W. Østerberg, * M. F. Hansen

Department of Micro- and Nanotechnology, Technical University of Denmark

DTU Nanotech, Building 345B, DK-2800 Kongens Lyngby, Denmark

* E-mail: Mikkel.Hansen@nanotech.dtu.dk

 

 

Received: 14 September 2012   /Accepted: 1 October 2012   /Published: 8 October 2012

Digital Sensors and Sensor Sysstems

 

Abstract: We investigate the changes of planar Hall effect bridge magnetic field sensors prepared without field annealing and with field annealing at 240 °C, 280 °C and 320 °C when these are exposed to temperatures between 25 °C and 90 °C. From analyses of the sensor response vs. magnetic field we extract the exchange bias field Hex, the uniaxial anisotropy field HK and the anisotropic magnetoresistance (AMR) of the exchange biased thin films at a given temperature. By comparing measurements carried out at elevated temperatures T with measurements carried out at 25 °C after exposure to T, we separate the reversible from the irreversible changes of the sensors. The un-annealed sample shows a significant irreversible change of Hex and HK upon exposure to temperatures above room temperature. The irreversible changes are significantly reduced but not eliminated by the low-temperature field annealing. The reversible changes with temperature are essentially the same for all samples. The results are not only relevant for sensor applications but also demonstrate the method as a useful tool for characterizing exchange-biased thin films.

 

Keywords: Magnetic biosensors, Planar Hall effect, Exchange bias, Anisotropic magnetoresistance

 

 

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