Vol. 27, Special Issue, May 2014, pp. 217-220

Abstract: In this paper, we have studied Au/n-GaN Schottky diodes. The substrates are realized on bulk GaN. The current-voltage (I-V) and capacitance–voltage (C–V) of Au/n-GaN structures were investigated at room temperature. The electrical parameters such as saturation current I₀ (1.98 ´ 10^-7 A), ideality factor n (1.02), barrier height f_bn (0.65 eV) and series resistance Rs (84 W) were evaluated from I–V experimental data. The characteristics in these data structures Schottky Au/n-GaN can help to highlight the main conduction mechanisms observed. In addition to the thermionic current present in our structures, the leakage current intervenes too. The barrier height and doping determined from the (C-V) characteristic are of the order of 1.17 eV and 8.16 ´ 10¹⁶ cm^-3, respectively. The average density of surface states N_ss determined set to 1.09 ´ 10¹² eV^-1 cm^-2.

Keywords: Au/GaN; I-V; C-V; Schottky Diodes.

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