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Vol. 142, No. 7, July 2012, pp. 76-86




Theoretical Analysis to Capacitance of RF MEMS Clamped-Clamped Capacitive Switch

Tian-Jie CAO

The Airport College, Civil Aviation University of China, Tianjin 300300, China

Tel.: 86-022-24095061, fax: 86-022-24092470

E-mail: caotianjie@sohu.com



Received: 2 May 2012   /Accepted: 23 July 2012   /Published: 31 July 2012

Digital Sensors and Sensor Sysstems


Abstract: A one-dimensional three-stage static model for analyzing RF MEMS clamped-clamped capacitive switch was used to calculate the capacitance of the switch in the different states. This model is based on the small displacement assumptions of the clamped-clamped beam and divides the deformation of the clamped-clamped beam subjected to the electrostatic force into three stages: The first is a clamped-clamped beam subjected to electrostatic force without any constrain at the center; The second is a beam subjected to both a concentrated force and a moment and with a constraint at the center; The third is a beam subjected to both the electrostatic force and a concentrated force with a given displacement and a zero angle of rotation over the central part of the beam. With the model the capacitance of the switch in different states can be obtained and therefore the relation between the capacitance and the hold-on voltage and the relation between the capacitance and the contact region can be analyzed. From analysis the effect of some geometry dimensions, such as the length of the beam, the length of the pull-down electrode, the initial gap and the depth of the beam, on the capacitance can be understood and some conclusions may be useful to the design of the MEMS clamped-clamped capacitive switch.


Keywords: Capacitance, Clamped-clamped beam, Electrostatic force, RF MEMS switch



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