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Vol. 235, Issue 7, July 2019, pp. 9-14




Nitrogen-doped Carbon-based Very Thin Film on Quartz or Sapphire Substrate
as Back-side Illuminated Transmission Photocathode

1, 2, * Jozef HURAN, 1 Nikolay I. BALALYKIN, 1 Mikhail A. NOZDRIN, 3 Vlasta SASINKOVÁ, 4 Angela KLEINOVÁ, 1 Alexander P. KOBZEV and 2 Eva KOVÁČOVÁ

1 Joint Institute for Nuclear Research, Joliot-Curie 6, Dubna, 141980, Russian Federation
2 Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava, 84104, Slovakia
3 Institute of Chemistry, Slovak Academy of Sciences, Dúbravská cesta 9, 84538 Bratislava, Slovakia
4 Polymer Institute, Slovak Academy of Sciences, D?bravsk? cesta 9, 84541 Bratislava, Slovakia
1 Tel.: + 74962163843, fax: + 74962165767

E-mail: jozef.huran@savba.sk


Received: 15 April 2019 /Accepted: 28 May 2019 /Published: 31 July 2019

Digital Sensors and Sensor Sysstems


Abstract: Nitrogen-doped carbon-based very thin films were deposited on quartz or sapphire substrate by RF reactive magnetron sputtering using carbon target and gas mixture of Ar and reactive gases N2 or N2+H2. The concentration of elements in the films was determined by RBS and ERD analytical method simultaneously. Carbon-based films surface morphology was examined by scanning electron microscopy. Raman spectroscopy was used for chemical structural properties investigation of carbon films. The photo-electron emission properties were determined by the measurement of cathode bunch charge of prepared back-side pulsed laser illuminated transmission photocathode. Adding hydrogen to gas mixture and changing their flow when carbon films are growth, leads to different results of photo-electron emission properties. Influence of chemical structural properties of N-doped carbon- based very thin films on quartz or sapphire substrates on the photo-induced electron emission of back-side illuminated transmission photocathode are discussed.


Keywords: Carbon very thin film, Magnetron sputtering, Structural properties, Transmission photocathode.


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