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Vol. 103, Issue 4, April 2009, pp.52-64





Design of a Capacitive SOI Micromachined Accelerometer


Wenjing ZHAO, Limei XU

Institute of Astronautics & Aeronautics

University of Electronic Science and Technology of China

Chengdu, Sichuan 610054, China

Tel.: 028-83205198

E-mail: jinjin83205181@163.com



Received: 16 February 2009   /Accepted: 20 April 2009   /Published: 27 April 2009


Abstract: A capacitive micromachined accelerometer based on the technique of silicon on insulator, is designed in this paper. The proposed microaccelerometer is designed to obtain good electrical performance and radioresistance in order to make the accelerometer integrate with the CMOS chip. The performance of the capacitive SOI microaccelerometer is calculated to determine its linear capacitance change and achieves a very linear response with input acceleration after theoretical analysis. The relationship between acceleration and output voltage is discussed. The mechanical performance of the capacitive microaccelerometer was simulated to obtain optimum design parameters and structural characteristics by the finite element method. The results show that capacitance sensitivity, range, resolution characteristic indexes and so on respectively through the simulation and theoretical analysis. Finally the fabrication process for the SOI technique suitable for batch fabrication is proposed.


Keywords: MEMS, Capacitive accelerometer, SOI, FEM


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