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Vol. 118, Issue 7, July 2010, pp.122-130




Improvement in the Sensitivity of PbO Doped Tin Oxide Thick Film Gas Sensor by RF and Microwave Oxygen Plasma Treatment



Center for Research in Microelectronics, Department of Electronics Engineering,

Institute of Technology, Banaras Hindu University,

Varanasi 221005, India

*Tel.: +91-9532735426

E-mail: jks_jitendra@rediffmail.com



Received: 14 April 2010   /Accepted: 24 July 2010   /Published: 31 July 2010


Abstract: In the present work efforts have been made to analyze the effect of oxygen plasma and PbO doping on the sensitivity of SnO2-based thick film gas sensor for methanol, propanol and acetone. The effect of substrate temperature on the response of dual frequency (RF and microwave) plasma treated thick film sensor array has also been studied. To achieve this, three sensor arrays (each with four tin oxide sensors doped with different (1 %, 2 %, 3 % and 4 % PbO) concentrations) were fabricated by thick film technology and then treated with oxygen plasma for various durations (5 min, 10 min. and 15 min.). The plasma treated sensors were found to possess appreciably high sensitivity at room temperature in comparison to untreated sensor. The sensitivity showed the increasing trend with plasma exposure time and 15 minutes exposure time was found to be most suitable as the sensitivity of the plasma treated sensors for this duration were high towards all the chosen vapors with maximum (97 %) value for propanol. The sensitivity of the sensors were found to be increasing gradually as PbO concentration was varied from 1- 4%.


Keywords: Tin oxide, Thick film, Sensitivity, Oxygen plasma, Microwave


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