On-line Magazine 'Sensors & Transducers' (S&T e-Digest)

    (ISSN 1726- 5479)

Vol. 69, Issue 7, July 2006, pp. 629-636

Studies on Chemically Deposited Nonstoichiometric Thin Films of CuInSe2 -a Highly Promising Material for Photosensors

R. H. Bari¹, L. A. Patil^*1, P. P. Patil²

¹Materials Research Lab., P.G. Dept. of Physics, Pratap College, Amalner, 425401, India

²Director, Physical sciences , North Maharashtra University, Jalgaon, India

^*Corresponding author

E-mail: plalchand_phy_aml@yahoo.co.in

Received: 3 June 2006   Accepted: 19 July 2006   Published: 25 July 2006

Abstract. Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at 60^oC. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out. Characterization includes X-ray diffraction (XRD), Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Energy dispersive x-ray analysis (EDAX), Absorption spectroscopy. The results are discussed and interpreted.

Keywords: copper indium diselenide, thin films, chemical bath deposition, nonstoichiometry

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