Sensors & Transducers Journal
(ISSN 1726- 5479)
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205.767 |
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(ISSN 1726- 5479) |
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Vol. 137, Issue 2, February 2012, pp. 36-46
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Internal Noises in MOS/EIS, MOSFET/ISFET Structures & Light Addressable Potentiometric Sensors
Ferdinand GASPARYAN and Vladimir AROUTIOUNIAN Department of Physics of Semiconductors & Microelectronics, Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan, Armenia Tel.: (37410) 55 55 902 E-mail: fgaspar@ysu.am
Received: 25 November 2011 /Accepted: 14 February 2012 /Published: 28 February 2012 |
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Abstract: The main types of internal noises in (bio-) chemical sensors on the base of electrolyte-insulator-semiconductor structures, ion selective field-effect transistors and light addressable potentiometric sensors, are classified. Corresponding detailed electrical equivalent schemes are modeled and designed; expressions for noise spectral density are developed. The sources of the main types are shortly characterized.
Keywords: Sensor, Field-effect, Noise, Equivalent scheme
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