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Vol. 137, Issue 2, February 2012, pp. 115-122




Study of the Phenomena of Transport in the Hg0.8Cd0.2Te Substrate of n-type by the Monte Carlo Method


MOUGHLI Hassane, BELGHACHI Abderrahmane, DAOUDI Mebarka

Laboratory physics and semiconductor devices, Bechar University,

Po. Box No. 417, 08000 Bechar, Algeria

E-mail: moughlihassane@yahoo.fr



Received: 22 December 2011   /Accepted: 14 February 2012   /Published: 28 February 2012

Digital Sensors and Sensor Sysstems


Abstract: The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Many methods based on modeling are actually successfully used to solve this equation. The Monte Carlo method is among the most methods used for studying electronics components operations. It consist to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. It is therefore an iterative process made up from a whole coasting flights stopped by optical polar interactions, and, impurities, ionization and Disorder of alloy. By applying this method to material Hg0.8Cd0.2Te we have described the behavior of the carriers from dynamic and energetic point of view (speed and energy variation according to the field). The simulation is applied, taking into account variation of the carriers as a function of the time in the non stationary mode, the effect of temperature, and doping concentration. The results we obtained are similar to the theory.


Keywords: Simulation, Method Monte Carlo, Semi-conductor on base Hg0.8Cd0.2Te, Electric field



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