Realization of Porous Silicon Distributed Bragg Reflector for Optical Sensing Applications

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Vol. 139, No. 4, April 2012, pp. 79-86

Realization of Porous Silicon Distributed Bragg Reflector for Optical Sensing Applications

^aP. N. Patel, ^b V. Mishra, ^cA. K. Panchal, ^dN. H. Maniya

^{a, b, d}Electronics Engineering Department,

^cElectrical Engineering Department,

S. V. National Institute of Technology, Surat-395007, Gujarat, India

E-mail: ^a pnp@eced.svnit.ac.in, ^b vive@eced.svnit.ac.in, ^c akp@eed.svnit.ac.in

Received: 2012 /Accepted: 23 April 2012 /Published: 30 April 2012

Abstract: This paper reports the feasibility for realization of Porous Silicon (PS) based Distributed Bragg Reflector (DBR) structures for an optical sensing applications. PSDBR sensor device structure was fabricated by electrochemical anodization of crystalline silicon wafer and proposed as a large surface area matrix for optical sensing applications. The refractive index of the PSDBR structure is tuned by changing current density and the thickness by etching time. Photonic stop band wavelength in the measured reflectance spectra of sensor device structure was analyzed for the detection of the analyte in the porous structure. The sensing device performance is tested by the different organic chemicals. The photonic stop band wavelength of DBR showed the significant red shift after organic chemical adsorption because the layers refractive index was changed after chemical fill the pores of the PSDBR structure. Also the stop band wavelength shift showed a linear relationship with the refractive index of the organic chemicals.

Keywords: Porous silicon, Electrochemical anodization, Distributed Bragg reflector, Optical sensor device

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