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Vol. 10, Special Issue, February 2011, pp.60-70



Charge-sensitive Infrared Phototransisotrs: Single-photon Detctors in the Long-Wavelength Infrared


1Takeji Ueda and 2Susumu Komiyama

Department of Basic Science, the University of Tokyo

Komaba 3-8-1, Meguro-ku, Tokyo, 153-8902, Japan

Fax/Tel.: +81-3-5454-6960

E-mail: ueda@iis.u-tokyo.ac.jp



Received: 18 October 2010   /Accepted: 11 January 2011   /Published: 8 February 2011


Abstract: Novel ultrasensitive detectors in the wavelength range of λ = 5-50 μm have developed. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well structures. The devices serve as a phototransistor capable of counting single photons, while a function is similarly to CMOS image sensors. The excellent noise equivalent power (NEP = 6.810-19 W/Hz1/2) and specific detectivity (D* = 1.21015 cmHz1/2/W) are demonstrated for λ = 14.7 μm, which are by a few orders of magnitude superior to those of the other state-of-the-art detectors. These figures of merit persist up to 23K. Temperature dependence of the performance is studied and wavelength range expansion is attempted. The simple planar structure of CSIPs is feasible for array fabrication including future monolithic integration with reading circuits.


Keywords: THz, Single-photon detector, Ultrasensitive, Temperature dependence, Wavelength range expansion


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