Vol. 11, Special Issue, April 2011, pp.1-9

Piezoresistive Sensors Development Using Monolithic CMOS MEMS Technology   2A. Chaehoi, 2M. Begbie, 2D. Weiland, 2D. O’Connell and 1S. Ray 1Semefab Ltd., Glenrothes, KY7 4NS, U.K. 2 Institute for System Level Integration, Research Avenue North, Edinburgh, Scotland, EH14 4AP Tel.: +44 (0)131 510 0670, fax: +44 (0) 131 449 3141 E-mail: Aboubacar.Chaehoi@sli-institute.ac.uk     Received: 10 December 2010   /Accepted: 15 March 2011   /Published: 5 April 2011

Abstract: This paper presents the development of a monolithic CMOS-MEMS platform under the iDesign and SemeMEMS projects with the aim of jointly providing an open access “one-stop-shop” design and prototyping facility for integrated CMOS-MEMS. This work addresses the implementation of a 3-axis accelerometer and a pressure sensor using Semefab’s in-house 2-poly 1-metal CMOS process on a 380/4/15 μm SOI wafer; the membrane and the proof mass being micromachined using double-sided Deep Reactive Ion Etching (DRIE). This monolithic approach promises, in high volume production and using low complexity processes, a dramatic cost reduction over hybrid sensors. Furthermore, the embedded signal conditioning and the low-noise level in polysilicon gauges enables high performance to be achieved by implementing dedicated on-chip amplification and filtering circuitry.

Keywords: Monolithic piezoresistive, CMOS MEMS, Inertial, Pressure, Sensors

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