Abstract: In this article we present an advanced hydrodynamic model for studying the charge carrier transport in a wide range of semiconductor devices and sensors. The proposed includes the true energy band structure of any semiconductor material and its surface effects. The model has been compared with other transport models, and its primary results are accurate and closer to the more complex approaches, such as Monte Carlo device simulation. One of the most salient features of our model is its great attention of the convection transport and velocity gradients of charge carriers. Therefore, it handles the electron gas shear rate and viscosity near the rough surfaces of semiconductor devices. This is shown to limit the charge carrier mobility near the surface of semiconductor devices in general and the MOSFET nano-devices in particular. According to our knowledge, the electron/hole gas viscosity effects have not been treated yet in the literature of hydrodynamic modelling and simulation of semiconductor devices and sensors.

Keywords: Semiconductor devices, Hydrodynamic model, Electron gas viscosity, Energy band structure. Electron gas viscosity, Surface mobility.

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