MIS Transistor with Integrated Waveguide for Electrophotonics and the Effect of Channel Length in Light Detection

Sensors & Transducers Journal

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Vol. 237, Issue 9-10, September-October 2019, pp. 60-66

MIS Transistor with Integrated Waveguide for Electrophotonics
and the Effect of Channel Length in Light Detection

J. HERNÁNDEZ-BETANZOS, A. A. GONZÁLEZ-FERNÁNDEZ, J. PEDRAZA and ^* M. ACEVES-MIJARES

Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México
Tel.: +52 222 2470517

E-mail: maceves@inaoep.mx

Received: 30 August 2019 /Accepted: 27 September 2019 /Published: 30 November 2019

Abstract: In this work, we study the optical response of MOS-like transistors with a Si3N4 integrated waveguide which serves also as the dielectric of the gate, and P-type substrate with 1´10¹² cm^-3 acceptor concentration and different channel length. Simulation results show the possibility to integrate this kind of MIS transistor as detectors in an electrophotonic circuit compatible with CMOS fabrication process and obtaining electrical gain for low power light signals (below 400 nW).

Keywords: Electrophotonics, Integrated photonics, Planar waveguide, Si photonics.

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